Phase transitions and incommensurability in the layered semiconductor TlInS2-an NMR study
Identifieur interne : 001706 ( Main/Repository ); précédent : 001705; suivant : 001707Phase transitions and incommensurability in the layered semiconductor TlInS2-an NMR study
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Abstract
We report on the first NMR study of powder and single crystal samples of thallium indium sulfide, TlInS2. The crystal under study is a pure single-layer TlInS2 polytype. Our findings show that transformation from the high temperature paraelectric phase to the low temperature ferroelectric phase occurs via an incommensurate phase that exists in the temperature range from Tc = 192 K to Ti = 205 K. On approaching the phase transition at Ti from above, the crystal exhibits a soft mode behavior. A discrepancy in the literature data on the phase transitions in TlInS2 is discussed and ascribed to polytypism of the TlInS2 crystals.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Phase transitions and incommensurability in the layered semiconductor TlInS<sub>2</sub>-an NMR study</title><author><name sortKey="Panich, A M" uniqKey="Panich A">A. M. Panich</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Ben-Gurion University of the Negev, PO Box 653</s1><s2>Be'er Sheva 84105</s2><s3>ISR</s3><sZ>1 aut.</sZ></inist:fA14><country>Israël</country><wicri:noRegion>Be'er Sheva 84105</wicri:noRegion></affiliation></author><author><name sortKey="Mogilyansky, D" uniqKey="Mogilyansky D">D. Mogilyansky</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institutes for Applied Research, Ben-Gurion University of the Negev</s1><s2>Be'er-Sheva 84105</s2><s3>ISR</s3><sZ>2 aut.</sZ></inist:fA14><country>Israël</country><wicri:noRegion>Be'er-Sheva 84105</wicri:noRegion></affiliation></author><author><name sortKey="Sardarly, R M" uniqKey="Sardarly R">R. M. Sardarly</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute for Radiation Problems, Azerbaijan National Academy of Sciences, B Vahabzadeh street 9</s1><s2>Baku, 1 143</s2><s3>AZE</s3><sZ>3 aut.</sZ></inist:fA14><country>Azerbaïdjan</country><wicri:noRegion>Baku, 1 143</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0181968</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0181968 INIST</idno><idno type="RBID">Pascal:12-0181968</idno><idno type="wicri:Area/Main/Corpus">001F07</idno><idno type="wicri:Area/Main/Repository">001706</idno></publicationStmt><seriesStmt><idno type="ISSN">0953-8984</idno><title level="j" type="abbreviated">J. phys., Condens. matter : (Print)</title><title level="j" type="main">Journal of physics. Condensed matter : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ferroelectric transitions</term><term>Goldstone mode</term><term>Incommensurate phases</term><term>Indium Thallium Sulfides Mixed</term><term>Layered crystals</term><term>Monocrystals</term><term>Nuclear magnetic resonance</term><term>Polytypism</term><term>Quadrupole moments</term><term>Semiconductor materials</term><term>Soft modes</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Phase incommensurable</term><term>Résonance magnétique nucléaire</term><term>Polytypisme</term><term>Transition ferroélectrique</term><term>Mode mou</term><term>Moment quadripolaire</term><term>Mode Goldstone</term><term>Indium Thallium Sulfure Mixte</term><term>Semiconducteur</term><term>Monocristal</term><term>Cristal lamellaire</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the first NMR study of powder and single crystal samples of thallium indium sulfide, TlInS<sub>2</sub>. The crystal under study is a pure single-layer TlInS<sub>2</sub> polytype. Our findings show that transformation from the high temperature paraelectric phase to the low temperature ferroelectric phase occurs via an incommensurate phase that exists in the temperature range from T<sub>c</sub> = 192 K to T<sub>i</sub> = 205 K. On approaching the phase transition at T<sub>i</sub> from above, the crystal exhibits a soft mode behavior. A discrepancy in the literature data on the phase transitions in TlInS<sub>2</sub> is discussed and ascribed to polytypism of the TlInS<sub>2</sub> crystals.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0953-8984</s0></fA01><fA02 i1="01"><s0>JCOMEL</s0></fA02><fA03 i2="1"><s0>J. phys., Condens. matter : (Print)</s0></fA03><fA05><s2>24</s2></fA05><fA06><s2>13</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Phase transitions and incommensurability in the layered semiconductor TlInS<sub>2</sub>-an NMR study</s1></fA08><fA11 i1="01" i2="1"><s1>PANICH (A. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>MOGILYANSKY (D.)</s1></fA11><fA11 i1="03" i2="1"><s1>SARDARLY (R. M.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Ben-Gurion University of the Negev, PO Box 653</s1><s2>Be'er Sheva 84105</s2><s3>ISR</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Institutes for Applied Research, Ben-Gurion University of the Negev</s1><s2>Be'er-Sheva 84105</s2><s3>ISR</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Institute for Radiation Problems, Azerbaijan National Academy of Sciences, B Vahabzadeh street 9</s1><s2>Baku, 1 143</s2><s3>AZE</s3><sZ>3 aut.</sZ></fA14><fA20><s2>135901.1-135901.5</s2></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>577E2</s2><s5>354000509649990170</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>26 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0181968</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physics. Condensed matter : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on the first NMR study of powder and single crystal samples of thallium indium sulfide, TlInS<sub>2</sub>. The crystal under study is a pure single-layer TlInS<sub>2</sub> polytype. Our findings show that transformation from the high temperature paraelectric phase to the low temperature ferroelectric phase occurs via an incommensurate phase that exists in the temperature range from T<sub>c</sub> = 192 K to T<sub>i</sub> = 205 K. On approaching the phase transition at T<sub>i</sub> from above, the crystal exhibits a soft mode behavior. A discrepancy in the literature data on the phase transitions in TlInS<sub>2</sub> is discussed and ascribed to polytypism of the TlInS<sub>2</sub> crystals.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70F60</s0></fC02><fC02 i1="02" i2="3"><s0>001B70G80B</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Phase incommensurable</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Incommensurate phases</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Résonance magnétique nucléaire</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Nuclear magnetic resonance</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Polytypisme</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Polytypism</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Transition ferroélectrique</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Ferroelectric transitions</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Mode mou</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Soft modes</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Moment quadripolaire</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Quadrupole moments</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Mode Goldstone</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Goldstone mode</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Modo Goldstone</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Indium Thallium Sulfure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Indium Thallium Sulfides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>15</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>15</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Monocristal</s0><s5>16</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Monocrystals</s0><s5>16</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Cristal lamellaire</s0><s5>17</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Layered crystals</s0><s5>17</s5></fC03><fN21><s1>135</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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